skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


  • Home
  • Search Results
  • Page 1 of 1

Search for: All records

Creators/Authors contains: "Liang, B"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. ; ; ; ; ; (, Proceedings of the 47th Conference of the International Group for the Psychology of Mathematics Education)
    Accepted Manuscript Full Text Available
  2. ; ; ; ; ; ; (, Proceedings of the IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR))
    Accepted Manuscript Full Text Available
  3. ; ; (, Proceedings of the Annual Conference on Research in Undergraduate Mathematics Education)
    null (Ed.)
    Accepted Manuscript Full Text Available
  4. ; ; ; ; ; ; ; (, Gynecologic oncology)
    Full Text Available 
  5. ; ; ; ; ; (, Proceedings of the Annual Conference on Research in Undergraduate Mathematics Education)
    null (Ed.)
    Accepted Manuscript Full Text Available
  6. ; ; ; ; ; ; ; (, Electronics Letters)
    The suppression of leakage current via surface passivation plays a critical role for GaSb‐based optoelectronic devices. In this Letter the authors carefully optimise the sulfur passivation parameters for improving the performance of GaSb p–i–n devices. Two competing processes are evaluated during the sulfur passivation process: the hydrolysis of HS–ions that aide surface passivation and the re‐oxidation, respectively. Upon the optimisation of sulfur passivation parameters and subsequent encapsulation with atomic layer deposition Al2O3, the surface resistivity significantly increased from 4.3 kΩ.cm to 28.6 kΩ.cm, leading to a 19.1 times drop in dark current at room temperature for the GaSb p–i–n structure. This Letter provides a repeatable and stable passivation approach for improving the optoelectronic performance of GaSb‐based devices. 
    more » « less